| PART |
Description |
Maker |
| NE3512S02 NE3512S02-T1C-A NE3512S02-T1D-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR 异质结型场效应晶体管
|
California Eastern Laboratories, Inc.
|
| NJ26 |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| NJ16 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ26 |
Silicon Junction Field-Effect Transistor
|
INTERFET
|
| PJ99 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| BF246 BF246C Q62702-F393 BF246A BF246B Q62702-F219 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
|
SIEMENS[Siemens Semiconductor Group]
|
| NJ36D |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ72L |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ1800DL |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| J111 J112 J113 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS
|
Micro Electronics
|
| SMPJ232 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| SMPJ110A |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
